InGaAs 28Gbaud PIN & 4x28Gbaud Array PD Chip － OS-PD2818、OS-PD4x2818
50G -200G PAM4 PIN PD芯片
Features
Data rate up to 200Gbps
High Responsivity
Low Capacitance
Low Dark Current
Top Illuminated planar structure
Diode on Semi Insulating Substrates
Anode/Cathode Pads on Front Side
Application
IEEE 50-200Gigabit Ethernet
200Gbps CWDM4,PAM4
Specification (Tc=25℃，Single Die)
PARAMETER | SYMBOL | MIN | TYP | MAX | UNIT | TEST CONDITIONS |
Active area diameter | D | 18 | µm | |||
Response range | λ | 900 | 1650 | nm | ||
Responsivity | R | 0.8 | 0.90 | A/W | λ=1310nm | |
0.90 | λ=1550nm | |||||
Dark current | ID | 0.01 | 0.10 | nA | VR=5V | |
Capacitance | C | 0.06 | 0.09 | pF | VR=2V, f=1MHz | |
Bandwidth | Bw | 25.0 | GHz | 3dB down, RL=50Ω | ||
Die size | 250X340 | µm | For Single Die | |||
250X1360 | For 1x4 Array | |||||
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产品应用覆盖光接入网、5G无线通信、光传输网、数据中心、微波光子、量子通信、屏下传感、HDMI、气体传感、红外成像、激光雷达等领域，并可提供不同响应波长的各种大面积光探测器芯片及一维和二维光探测器阵列芯片等定制服务。
——产品应用覆盖光接入网、5G无线通信、光传输网、数据中心、微波光子、量子通信、屏下传感、HDMI、气体传感、红外成像、激光雷达等领域，并可提供不同响应波长的各种大面积光探测器芯片及一维和二维光探测器阵列
